Bourgeon Že jo Krajina gan laser Zájmeno šuplík progresivní
a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...
World's smallest mass-produced GaN laser chip from silicon working substrate
Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
Investigating the low energy efficiency of gallium-nitride-based laser diodes
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
Indium gallium nitride laser diode directly integrated with silicon